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IRL520NS

Part No IRL520NS
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 100V 10A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Maximum) at Id, Vgs 180mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 20nC at 5V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 440pF at 25V
Power Dissipation (Maximum) 3.8W, 48W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188505-IRL520NS
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL520NS CAD Model

Description

The Infineon Technologies 1188505-IRL520NS is an obsolete electronic component. It is a medium-popularity product with a balanced supply and demand status.

  • Technology: MOSFET
  • Transistor Polarity: N-Channel
  • Mounted using: SMD technology
  • Supplier Device Package: D2PAK
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Gate Source Voltage (Maximum): ±16V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 440pF @ 25V
  • Maximum Power Dissipation: 3.8W, 48W
  • Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8254 $53.6510
130+ $0.7732 $100.5160
205+ $0.7471 $153.1555
290+ $0.6948 $201.4920
375+ $0.6687 $250.7625
470+ $0.6426 $302.0220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,101 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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