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Same model may have multiple batches, images only for reference.
IRL2203NSPBF Real Image
Same model may have multiple batches, images only for reference.

IRL2203NSPBF

Part No IRL2203NSPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET® Power MOSFET | MOSFET N-CH 30V 116A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 116A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 7mOhm at 60A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 60nC at 4.5V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 3290pF at 25V
Power Dissipation (Maximum) 3.8W, 180W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188457-IRL2203NSPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL2203NSPBF CAD Model

Description

The Infineon Technologies IRL2203NSPBF is an N-channel MOSFET transistor with a TO-263-3, D2Pak (2 Leads + Tab), TO-263AB package.

  • Maximum Power Dissipation: 3.8W
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 116A
  • Maximum Rds On @ Id, Vgs: 7mOhm @ 60A, 10V
  • Gate-Source Voltage(th) @ maximum Id: 3V @ 250μA
  • Gate Charge (Qg) @ maximum Vgs: 60nC @ 4.5V
  • Input Capacitance (Ciss) @ maximum Vds: 3290pF @ 25V
  • Supply and Demand Status: limited
  • Manufacturer Pack Quantity: 50

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9+ $11.8519 $106.6671
14+ $11.4815 $160.7410
18+ $11.1112 $200.0016
24+ $10.7408 $257.7792
32+ $9.6297 $308.1504
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