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Same model may have multiple batches, images only for reference.
IRGSL10B60KDPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRGSL10B60KDPBF

Part No IRGSL10B60KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 22A 156W TO220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 22A
Current - Collector Pulsed (Icm) 44A
Vce(on) (Maximum) at Vge, Ic 2.2V at 15V, 10A
Maximum Power 156W
Switching Energy 140μJ (on), 250μJ (off)
Input Type Standard
Gate Charge 38nC
Td (on/off) at 25°C 30ns/230ns
Test Condition 400V, 10A, 47Ohm, 15V
Reverse Recovery Time (trr) 90ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package TO-262
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188412-IRGSL10B60KDPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGSL10B60KDPBF CAD Model

Description

The Infineon Technologies 1188412-IRGSL10B60KDPBF is an NPT IGBT with a through-hole mounting style.

  • Type: NPT IGBT
  • Mounting Style: Through-hole
  • Collector-Emitter Breakdown Voltage: 600V
  • Collector Current: 22A
  • Maximum Vce(on) @ Vge, Ic: 2.2V @ 15V, 10A
  • Gate Charge: 38nC
  • Switching Energy (on): 140μJ
  • Switching Energy (off): 250μJ
  • Operating Temperature: -55°C to 150°C
  • Package: TO-262
  • Applications: Motor drives, power inverters, and welding equipment

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