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IRGS6B60KDPBF

Part No IRGS6B60KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 13A 90W D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 13A
Pulsed Collector Current 26A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 5A
Maximum Power Dissipation 90W
Total Switching Energy(Ets) 110μJ (on), 135μJ (off)
Input Type Standard
Gate Charge 18.2nC
Turn-on and Turn-off delay time 25ns/215ns
Testing Conditions 400V, 5A, 100 Ohm, 15V
Reverse Recovery Time (trr) 70ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 040785-IRGS6B60KDPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGS6B60KDPBF CAD Model

Description

The Infineon Technologies 040785-IRGS6B60KDPBF is a high-performance MOSFET designed for use in a variety of applications.

  • Maximum Drain-Source Breakdown Voltage: 600V
  • Maximum Current Collector: 13A
  • Maximum Power Dissipation: 90W
  • Package: D2PAK
  • Mounting: SMT
  • Gate Charge: 18.2nC
  • Total Switching Energy: 110μJ (on) and 135μJ (off)
  • Turn-On Delay Time: 25ns
  • Turn-Off Delay Time: 215ns
  • Supply and Demand Status: Limited
The Infineon Technologies 040785-IRGS6B60KDPBF is an active product, but its supply and demand status is limited.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.5714 $50.1426
22+ $4.5715 $100.5730
34+ $4.4286 $150.5724
47+ $4.2857 $201.4279
61+ $4.1429 $252.7169
81+ $3.7143 $300.8583
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,090 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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