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Same model may have multiple batches, images only for reference.
IRGS4B60KD1TRLP Infineon Technologies
Same model may have multiple batches, images only for reference.

IRGS4B60KD1TRLP

Part No IRGS4B60KD1TRLP
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 11A 63W D2PAK / Trans IGBT Chip N-CH 600V 11A 63000mW 3-Pin(2+Tab) D2PAK T/R
Datasheet
IRGS4B60KD1TRLP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel package
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 11A
Current - Collector Pulsed (Icm) 22A
Vce(on) (Maximum) @ Vge, Ic 2.5V @ 15V, 4A
Power - Max 63W
Switching Energy 73μJ (on), 47μJ (off)
Input Type Standard
Gate Charge 12nC
Td (on/off) @ 25°C 22ns/100ns
Test Condition 400V, 4A, 100 Ohm, 15V
Reverse Recovery Time (trr) 93ns
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Package D2PAK
Win Source Part Number 777094-IRGS4B60KD1TRLP
Popularity Medium
Supply and Demand Status Limited
Family Name IRGS4B60KD1
Introduction Date August 11, 2004
ECCN EAR99
Country of Origin Mexico
Halogen Free Not Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRGS4B60KD1TRLP CAD Model

Description

The Infineon Technologies 777094-IRGS4B60KD1TRLPBF is a NPT IGBT discrete semiconductor product with a maximum power of 63W and a reverse recovery time of 93ns.

  • Maximum Power: 63W
  • Reverse Recovery Time: 93ns
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting: SMD
  • Gate Charge: 12nC
  • Switching Energy: 73μJ (on) and 47μJ (off)
  • Introduction Date: August 11, 2004
  • ECCN: EAR99

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