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Same model may have multiple batches, images only for reference.
IRGR4045DPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRGR4045DPBF

Part No IRGR4045DPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 12A 77W DPAK
Datasheet
IRGR4045DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 12A
Pulsed Collector Current 18A
Collector-emitter saturation voltage(Max) 2V @ 15V, 6A
Maximum Power Dissipation 77W
Total Switching Energy(Ets) 56μJ (on), 122μJ (off)
Input Type Standard
Gate Charge 19.5nC
Turn-on and Turn-off delay time 27ns/75ns
Testing Conditions 400V, 6A, 47 Ohm, 15V
Reverse Recovery Time (trr) 74ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Win Source Part Number 1047374-IRGR4045DPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Computers & Computer Peripherals, Communications & Networking, Consumer Electronics, Industrial
Ultra Librarian 3D Model Ultra Librarian IRGR4045DPBF CAD Model

Description

The Infineon IRGR4045DPBF is an IGBT transistor with a maximum collector-emitter breakdown voltage of 600V and a maximum current collector of 12A.

  • Collector-Emitter Breakdown Voltage (Max): 600V
  • Current Collector (Max): 12A
  • Gate Charge: 19.5nC
  • Collector-Emitter Saturation Voltage (Max): 2V @ 15V, 6A
  • Mounting Type: Surface Mount
  • Package: D-Pak
  • Power Dissipation (Max): 77W
  • Status: Obsolete (EOL)
  • Supply and Demand: Balanced
  • Applications: Computers and computer peripherals, communications and networking, consumer electronics, and industrial applications.

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