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Same model may have multiple batches, images only for reference.
IRGR2B60KDPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRGR2B60KDPBF

Part No IRGR2B60KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 6.3A 35W DPAK
Datasheet
IRGR2B60KDPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 6.3A
Pulsed Collector Current 8A
Collector-emitter saturation voltage(Max) 2.25V @ 15V, 2A
Maximum Power Dissipation 35W
Total Switching Energy(Ets) 74μJ (on), 39μJ (off)
Input Type Standard
Gate Charge 12nC
Turn-on and Turn-off delay time 11ns/150ns
Testing Conditions 400V, 2A, 100 Ohm, 15V
Reverse Recovery Time (trr) 68ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Win Source Part Number 1047372-IRGR2B60KDPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGR2B60KDPBF CAD Model

Description

The Infineon Technologies IRGR2B60KDPBF is an NPT IGBT transistor designed for use in discrete semiconductor products.

  • Maximum Current Collector: 6.3A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Case/Package: D-Pak
  • Mounting Style: Surface Mount
  • Gate Charge: 12nC
  • Total Switching Energy (Ets): 74μJ (on), 39μJ (off)

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