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IRGPS66160DPBF

Name: IRGPS66160DPBF
Brand: Infineon Technologies
SKU: 921534
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRGPS66160DPBF
Manufacturer	Infineon Technologies
Catalog	IGBTs - Single
Description	IRGPS66160D - IGBT WITH ULTRAFAS / IGBT 600 V 240 A 750 W Through Hole SUPER-247 (TO-274AA)
Datasheet	IRGPS66160DPBF Datasheet
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr	Infineon Technologies
Package	Bulk
Product Status	Obsolete
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	240 A
Current - Collector Pulsed (Icm)	360 A
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 120A
Power - Max	750 W
Switching Energy	4.47mJ (on), 3.43mJ (off)
Input Type	Standard
Gate Charge	220 nC
Td (on/off) @ 25°C	80ns/190ns
Test Condition	400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr)	95 ns
Temperature Range - Operating	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-274AA
Supplier Device Package	SUPER-247 (TO-274AA)
Standard Package	18 pcs
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	921534-IRGPS66160DPBF
Ultra Librarian 3D Model	Ultra Librarian IRGPS66160DPBF CAD Model

Description

The 921534-IRGPS66160DPBF is a single IGBT transistor in the Discrete Semiconductor Products category.

Maximum Power: 750W
Reverse Recovery Time (trr): 95ns
Collector-Emitter Breakdown Voltage: 600V
Maximum Collector Current: 240A
Pulsed Current: 360A
Vce(on): 1.95V @ a gate-emitter voltage of 15V and a collector current of 120A
Switching Energy (on): 4.47mJ
Switching Energy (off): 3.43mJ
Gate Charge: 220nC
On/Off Delay Time: 80ns/190ns @ 25°C
Mounting: Through hole
Package: TO-274AA
Operating Temperature Range: -40°C to 175°C
Manufacturer: Infineon Technologies

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