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Same model may have multiple batches, images only for reference.
IRGP4760DPBF Real Image
Same model may have multiple batches, images only for reference.

IRGP4760DPBF

Part No IRGP4760DPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT WITH RECOVERY DIODE / IGBT 650 V 90 A 325 W Through Hole TO-247AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 90 A
Current - Collector Pulsed (Icm) 144 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 48A
Power - Max 325 W
Switching Energy 1.7mJ (on), 1mJ (off)
Input Type Standard
Gate Charge 145 nC
Td (on/off) @ 25°C 70ns/140ns
Test Condition 400V, 48A, 10Ohm, 15V
Reverse Recovery Time (trr) 170 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AC
Standard Package 72 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 921531-IRGP4760DPBF
Ultra Librarian 3D Model Ultra Librarian IRGP4760DPBF CAD Model

Description

The 921531-IRGP4760DPBF is a high-power IGBT transistor designed for various applications.

  • Maximum Power Rating: 325W
  • Collector-Emitter Breakdown Voltage: 650V
  • Maximum Collector Current: 90A
  • On-State Voltage: 2V @ a gate-emitter voltage of 15V and a collector current of 48A
  • Switching Energy (on): 1.7mJ
  • Switching Energy (off): 1mJ
  • Package: Through-hole, TO-247-3
  • Operating Temperature Range: -40°C to 175°C

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