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Same model may have multiple batches, images only for reference.
IRGB4059DPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRGB4059DPBF

Part No IRGB4059DPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 8A 56W TO220AB
Datasheet
IRGB4059DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 8A
Pulsed Collector Current 16A
Collector-emitter saturation voltage(Max) 2.05V @ 15V, 4A
Maximum Power Dissipation 56W
Total Switching Energy(Ets) 35μJ (on), 75μJ (off)
Input Type Standard
Gate Charge 9nC
Turn-on and Turn-off delay time 25ns/65ns
Testing Conditions 400V, 4A, 100 Ohm, 15V
Reverse Recovery Time (trr) 55ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 069663-IRGB4059DPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGB4059DPBF CAD Model

Description

The Infineon Technologies 069663-IRGB4059DPBF is a through hole mounted IGBT transistor.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 8A
  • Reverse Recovery Time: 55ns
  • Gate Charge: 9nC
  • Total Switching Energy (on): 35μJ
  • Total Switching Energy (off): 75μJ
  • Package: TO-220AB
  • Operating Temperature: -55°C to 175°C (TJ)
  • Maximum Power Dissipation: 56W
  • Pulsed Collector Current: 16A
  • Collector-Emitter Saturation Voltage (Max): 2.05V @ 15V, 4A
  • Turn-On Delay Time: 25ns
  • Turn-Off Delay Time: 65ns

This transistor is a commonly used part with medium popularity in the market.

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