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IRG7PH42UD1PBF

Name: IRG7PH42UD1PBF
Brand: Infineon Technologies
SKU: 161244
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRG7PH42UD1PBF
Manufacturer	Infineon Technologies
Catalog	IGBTs - Single
Description	IGBT 1200V 85A 313W TO247AC
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Obsolete(EOL)
IGBT Type	Trench
VCEO Maximum Collector-Emitter Breakdown Voltage	1200V
Maximum Current Collector	85A
Pulsed Collector Current	200A
Collector-emitter saturation voltage(Max)	2V @ 15V, 30A
Maximum Power Dissipation	313W
Total Switching Energy(Ets)	1.21mJ (off)
Input Type	Standard
Gate Charge	180nC
Turn-on and Turn-off delay time	-/270ns
Testing Conditions	600V, 30A, 10 Ohm, 15V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	TO-247AC
Win Source Part Number	016641-IRG7PH42UD1PBF
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRG7PH42UD1PBF CAD Model

Description

The Infineon Technologies IGBT transistor, part number IRG7PH42UD1PBF, is a through-hole mounting transistor with a maximum current collector of 85A and a maximum power dissipation of 313W.

Reverse Recovery Time (trr): -/270ns
Collector-Emitter Saturation Voltage (Max): 2V @ 15V, 30A

This transistor is categorized under Discrete Semiconductor Products and has a medium popularity. and its supply and demand status is limited.

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
6+	$10.5077	$63.0462
14+	$8.6218	$120.7052
21+	$8.3524	$175.4004
29+	$8.0829	$234.4041
37+	$7.8135	$289.0995
50+	$7.0052	$350.2600

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 1,200 pieces

MOQ: 6 pcs

Order Increment : 1 pcs

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