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IRG7PH35UD1-EP

Part No IRG7PH35UD1-EP
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS | IGBT 1200V 50A 179W TO247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 50A
Current - Collector Pulsed (Icm) 150A
Vce(on) (Maximum) at Vge, Ic 2.2V at 15V, 20A
Maximum Power 179W
Switching Energy 620μJ (off)
Input Type Standard
Gate Charge 130nC
Td (on/off) at 25°C -/160ns
Test Condition 600V, 20A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AD
Family Part Number IRG7PH35
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188322-IRG7PH35UD1-EP
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG7PH35UD1-EP CAD Model

Description

The Infineon Technologies IRG7PH35UD1-EP is a Trench IGBT type transistor with a maximum Vce(on) of 2.2V at 15V and 20A.

  • Maximum Vce(on): 2.2V @ 15V and 20A
  • Switching Energy: 620μJ (off)
  • Gate Charge: 130nC
  • Maximum Power: 179W
  • Vce(on) (Maximum) @ Vge, Ic: 2.2V @ 15V, 20A

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3456 $60.5520
105+ $1.1042 $115.9410
165+ $1.0695 $176.4675
225+ $1.0349 $232.8525
290+ $1.0002 $290.0580
390+ $0.8974 $349.9860
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Availability: 10,200 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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