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Same model may have multiple batches, images only for reference.
IRG4PC50UD-EPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4PC50UD-EPBF

Part No IRG4PC50UD-EPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 55A 200W TO247-3 / Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
Datasheet
IRG4PC50UD-EPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 55A
Current - Collector Pulsed (Icm) 220A
Vce(on) (Maximum) @ Vge, Ic 2V @ 15V, 27A
Power - Max 200W
Switching Energy 990μJ (on), 590μJ (off)
Input Type Standard
Gate Charge 180nC
Td (on/off) @ 25°C 46ns/140ns
Test Condition 480V, 27A, 5 Ohm, 15V
Reverse Recovery Time (trr) 50ns
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247AC
Win Source Part Number 777090-IRG4PC50UD-EPBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRG4PC50UD-E
Introduction Date April 30, 2004
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRG4PC50UD-EPBF CAD Model

Description

The Infineon Technologies IRG4PC50UD-EPBF is a power MOSFET transistor that is ideal for use in high power switching applications.

  • Maximum Power: 200W
  • Reverse Recovery Time: 50ns
  • Collector Current: 55A
  • Temperature Range: -55°C to 150°C
  • Package: TO-247-3
  • Halogen-Free: Yes

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