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Same model may have multiple batches, images only for reference.
IRG4PC50FPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4PC50FPBF

Part No IRG4PC50FPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 70A 200W TO247AC
Datasheet
IRG4PC50FPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 70A
Pulsed Collector Current 280A
Collector-emitter saturation voltage(Max) 1.6V @ 15V, 39A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 370μJ (on), 2.1mJ (off)
Input Type Standard
Gate Charge 190nC
Turn-on and Turn-off delay time 31ns/240ns
Testing Conditions 480V, 39A, 5 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Win Source Part Number 138310-IRG4PC50FPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4PC50FPBF CAD Model

Description

The Infineon Technologies IRG4PC50FPBF is a through-hole IGBT transistor designed for use in power electronics applications.

  • Maximum Current Collector: 70A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Collector-Emitter Saturation Voltage (Max): 1.6V @ 15V, 39A
  • Gate Charge: 190nC
  • Total Switching Energy (Ets): 370μJ (on), 2.1mJ (off)
  • Turn-On and Turn-Off Delay Time: 31ns/240ns
  • Package: TO-247AC
  • Maximum Power Dissipation: 200W

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