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IRF8252PBF

Part No IRF8252PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 25V 25A 8-SO
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 25V
Id - Continuous Drain Current 25A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 2.7mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.35V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 53nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5305pF at 13V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 95
MSL Level 1 (Unlimited)
Win Source Part Number 1187395-IRF8252PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF8252PBF CAD Model

Description

The Infineon Technologies 1187395-IRF8252PBF is an N-channel MOSFET transistor with a drain-source breakdown voltage of 25V and a continuous drain current of 25A.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 25A
  • Maximum Rds On: 2.7mOhm @ 25A and 10V
  • Gate-Source Voltage (th) (maximum) @ Id: 2.35V @ 100μA
  • Gate Charge (Qg) (maximum) @ Vgs: 53nC @ 4.5V
  • Input Capacitance (Ciss) (maximum) @ Vds: 5305pF @ 13V
  • Package: 8-SOIC
  • Power Dissipation (maximum): 2.5W
  • Manufacturer: Infineon Technologies

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2575 $57.9375
550+ $0.2113 $116.2150
850+ $0.2047 $173.9950
1,170+ $0.1981 $231.7770
1,510+ $0.1915 $289.1650
2,020+ $0.1716 $346.6320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,900 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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