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Same model may have multiple batches, images only for reference.
IRG4PC40FDPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4PC40FDPBF

Part No IRG4PC40FDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 49A 160W TO247AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 49A
Current - Collector Pulsed (Icm) 196A
Vce(on) (Maximum) at Vge, Ic 1.7V at 15V, 27A
Maximum Power 160W
Switching Energy 950μJ (on), 2.01mJ (off)
Input Type Standard
Gate Charge 100nC
Td (on/off) at 25°C 63ns/230ns
Test Condition 480V, 27A, 10Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188271-IRG4PC40FDPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4PC40FDPBF CAD Model

Description

The Infineon Technologies IRG4PC40FDPBF is an IGBT transistor in a TO-247AC package.

  • Maximum Collector-Emitter Voltage: 600V
  • Maximum Collector Current: 49A
  • Reverse Recovery Time: 42ns
  • Switching Energy: 950μJ (on) and 2.01mJ (off)
  • Gate Charge: 100nC
  • Test Condition: 480V, 27A, 10Ohm, 15V
  • Popularity: Yes
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity: 25
  • MSL Level: 1 (unlimited)
  • Maximum Power: 160W
  • Vce(on) (Maximum) @ Vge, Ic: 1.7V @ 15V, 27A
  • Td (on/off) @ 25°C: 63ns/230ns

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