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Same model may have multiple batches, images only for reference.
IRG4PC30U Real Image
Same model may have multiple batches, images only for reference.

IRG4PC30U

Part No IRG4PC30U
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) | IGBT 600V 23A 100W TO247AC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 23A
Current - Collector Pulsed (Icm) 92A
Vce(on) (Maximum) at Vge, Ic 2.1V at 15V, 12A
Maximum Power 100W
Switching Energy 160μJ (on), 200μJ (off)
Input Type Standard
Gate Charge 50nC
Td (on/off) at 25°C 17ns/78ns
Test Condition 480V, 12A, 23Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188266-IRG4PC30U
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Alternative Energy, Industrial
Ultra Librarian 3D Model Ultra Librarian IRG4PC30U CAD Model

Description

The Infineon Technologies 1188266-IRG4PC30U is a through-hole IGBT transistor with a maximum voltage breakdown of 600V and a maximum collector current of 23A. 1188266-IRG4PC30U is from Infineon Technologies.

  • Type: IGBT Transistor
  • Mounting Type: Through Hole
  • Voltage Breakdown (Max): 600V
  • Collector Current (Max): 23A
  • Applications: Power Management, Alternative Energy, Industrial
  • Switching Energy (On): 160μJ
  • Switching Energy (Off): 200μJ
  • Gate Charge: 50nC
  • Test Condition: 480V, 12A, 23Ohm, 15V
  • Package: TO-247AC, 25 pieces
  • Operating Temperature: -55°C to 150°C

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