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Same model may have multiple batches, images only for reference.
IRG4IBC20WPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4IBC20WPBF

Part No IRG4IBC20WPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 12A 34W TO220FP
Datasheet
IRG4IBC20WPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 12A
Pulsed Collector Current 52A
Collector-emitter saturation voltage(Max) 2.6V @ 15V, 6.5A
Maximum Power Dissipation 34W
Total Switching Energy(Ets) 60μJ (on), 80μJ (off)
Input Type Standard
Gate Charge 26nC
Turn-on and Turn-off delay time 22ns/110ns
Testing Conditions 480V, 6.5A, 50 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Win Source Part Number 1047301-IRG4IBC20WPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4IBC20WPBF CAD Model

Description

The Infineon Technologies 1047301-IRG4IBC20WPBF is a through-hole mounting IGBT transistor with a maximum collector current of 12A and a maximum collector-emitter breakdown voltage of 600V.

  • Maximum Collector Current: 12A
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Total Switching Energy: 60μJ
  • Turn-On Delay Time: 22ns
  • Turn-Off Delay Time: 110ns
  • Maximum Power Dissipation: 34W
  • Pulsed Collector Current: 52A
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-220AB Full-Pak
  • Category: Discrete Semiconductor Products
  • Lifecycle Status: Not Suitable for New Designs
  • Supply and Demand Status: Balanced

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