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Same model may have multiple batches, images only for reference.
IRG4BC40W-SPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4BC40W-SPBF

Part No IRG4BC40W-SPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 40A 160W D2PAK
Datasheet
IRG4BC40W-SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 40A
Current - Collector Pulsed (Icm) 160A
Vce(on) (Maximum) @ Vge, Ic 2.5V @ 15V, 20A
Power - Max 160W
Switching Energy 110μJ (on), 230μJ (off)
Input Type Standard
Gate Charge 98nC
Td (on/off) @ 25°C 27ns/100ns
Test Condition 480V, 20A, 10 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Package D2PAK
Manufacturer Homepage www.infineon.com
Win Source Part Number 753751-IRG4BC40W-SPBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRG4BC40W-S
Introduction Date August 30, 2004
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2021
Ultra Librarian 3D Model Ultra Librarian IRG4BC40W-SPBF CAD Model

Description

The IRG4BC40W-SPBF is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for use in high power switching applications. It is manufactured by Infineon Technologies and comes in a TO-263-3, D2Pak (2 Leads + Tab), TO-263AB package.

  • Maximum Power: 160W
  • Maximum Current: 40A
  • Switching Energy: 110μJ (on) and 230μJ (off)
  • Gate Charge: 98nC
  • Td (on/off) @ 25°C: 27ns/100ns
  • Voltage Breakdown: 600V
  • Vce(on): 2.5V @ 15V, 20A
  • Applications: Motor control, power supplies, and lighting

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