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Same model may have multiple batches, images only for reference.
IRG4BC30K-STRRP Infineon Technologies
Same model may have multiple batches, images only for reference.

IRG4BC30K-STRRP

Part No IRG4BC30K-STRRP
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 28A 100W D2PAK / Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(2+Tab) D2PAK T/R
Datasheet
IRG4BC30K-STRRP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel package
Part Status Obsolete(EOL)
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 28A
Current - Collector Pulsed (Icm) 56A
Vce(on) (Maximum) @ Vge, Ic 2.7V @ 15V, 16A
Power - Max 100W
Switching Energy 360μJ (on), 510μJ (off)
Input Type Standard
Gate Charge 67nC
Td (on/off) @ 25°C 26ns/130ns
Test Condition 480V, 16A, 23 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Package D2PAK
Win Source Part Number 777086-IRG4BC30K-STRRP
Popularity Medium
Supply and Demand Status Limited
Family Name IRG4BC30K-S
Introduction Date October 22, 2000
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRG4BC30K-STRRP CAD Model

Description

The Infineon Technologies IRG4BC30K-STRRP is a D2PAK packaged MOSFET transistor that has a maximum collector-emitter voltage breakdown of 600V and a maximum collector current of 28A.

  • Collector-Emitter Voltage Breakdown: 600V
  • Maximum Collector Current: 28A
  • Gate-Source Threshold Voltage: 2.7V @ 15V, 16A
  • Gate Charge: 67nC
  • Switching Energy: 360μJ on, 510μJ off
  • Maximum Power Dissipation: 100W
  • Mounting: Surface-mounting
  • ECCN: EAR99
  • Estimated EOL Date: Obsolete / end of life

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