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Same model may have multiple batches, images only for reference.
IRG4BC20SPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4BC20SPBF

Part No IRG4BC20SPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR | IGBT 600V 19A 60W TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 19A
Current - Collector Pulsed (Icm) 38A
Vce(on) (Maximum) at Vge, Ic 1.6V at 15V, 10A
Maximum Power 60W
Switching Energy 120μJ (on), 2.05mJ (off)
Input Type Standard
Gate Charge 27nC
Td (on/off) at 25°C 27ns/540ns
Test Condition 480V, 10A, 50Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220AB
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188227-IRG4BC20SPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4BC20SPBF CAD Model

Description

The Infineon Technologies 1188227-IRG4BC20SPBF is a through-hole IGBT type discrete semiconductor product.

  • Voltage: It has a maximum collector-emitter breakdown voltage of 600V and a maximum current collector of 19A.
  • Package: This product comes in a TO-220AB supplier device package and has a medium popularity rating.
  • MSL Level: The MSL level for this product is 1 (Unlimited).

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0776 $59.2680
135+ $0.8847 $119.4345
205+ $0.8570 $175.6850
280+ $0.8293 $232.2040
365+ $0.8016 $292.5840
485+ $0.7184 $348.4240
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Availability: 11,900 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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