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Same model may have multiple batches, images only for reference.
IRG4BC15MDPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRG4BC15MDPBF

Part No IRG4BC15MDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 14A 49W TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 14A
Current - Collector Pulsed (Icm) 28A
Vce(on) (Maximum) at Vge, Ic 2.3V at 15V, 8.6A
Maximum Power 49W
Switching Energy 320μJ (on), 1.93mJ (off)
Input Type Standard
Gate Charge 46nC
Td (on/off) at 25°C 21ns/540ns
Test Condition 480V, 8.6A, 75Ohm, 15V
Reverse Recovery Time (trr) 28ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188217-IRG4BC15MDPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4BC15MDPBF CAD Model

Description

The IRG4BC15MDPBF is an IGBT transistor from Infineon Technologies with a TO-220AB package.

  • Collector Current: 14A
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power: 49W
  • Vce(on): 2.3V @ 15V and 8.6A
  • Operating Temperature Range: -55°C to 150°C
  • td (on/off) @ 25°C: 21ns/540ns
  • Manufacturer Pack Quantity: 50
  • MSL Level: 1 (unlimited)

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