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IRG4BC10SDPBF

Part No IRG4BC10SDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 14A 38W TO220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 14A
Current - Collector Pulsed (Icm) 18A
Vce(on) (Maximum) at Vge, Ic 1.8V at 15V, 8A
Maximum Power 38W
Switching Energy 310μJ (on), 3.28mJ (off)
Input Type Standard
Gate Charge 15nC
Td (on/off) at 25°C 76ns/815ns
Test Condition 480V, 8A, 100Ohm, 15V
Reverse Recovery Time (trr) 28ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188214-IRG4BC10SDPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4BC10SDPBF CAD Model

Description

The Infineon Technologies 1188214-IRG4BC10SDPBF is a through-hole mounting style device with an input type of standard.

  • Mounting Style: Through-hole
  • Input Type: Standard
  • Voltage of Collector-Emitter Breakdown (Maximum): 600V
  • Current of Collector (Ic) (Maximum): 14A
  • Package: TO-220AB
  • Status: Obsolete
  • Temperature Range: -55°C ~ 150°C
  • Application: Ideal for use in discrete semiconductor products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8365 $64.2775
80+ $1.5073 $120.5840
120+ $1.4599 $175.1880
165+ $1.4126 $233.0790
215+ $1.3652 $293.5180
285+ $1.2243 $348.9255
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,150 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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