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IRFU3410

Part No IRFU3410
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET | MOSFET N-CH 100V 31A I-PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 31A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 39mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 56nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1690pF at 25V
Power Dissipation (Maximum) 3W, 110W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package IPAK (TO-251)
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188086-IRFU3410
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFU3410 CAD Model

Description

The Infineon Technologies IRFU3410 is an N-channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Channel Type: N-Channel
  • Continuous Drain Current: 31A
  • Maximum Drain-Source Voltage: 100V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Power Dissipation: 3W, 110W
  • Maximum On-Resistance: 39mOhm @ 18A, 10V
  • Package: IPAK (TO-251)
  • Mounting: Through-Hole
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9483 $61.6395
150+ $0.7785 $116.7750
230+ $0.7542 $173.4660
320+ $0.7300 $233.6000
410+ $0.7057 $289.3370
550+ $0.6329 $348.0950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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