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IRFU220N

Part No IRFU220N
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A) | MOSFET N-CH 200V 5A I-PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 600mOhm at 2.9A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 23nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 300pF at 25V
Power Dissipation (Maximum) 43W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package IPAK (TO-251)
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188072-IRFU220N
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFU220N CAD Model

Description

The Infineon Technologies IRFU220N is a MOSFET transistor with N-Channel polarity and IPAK (TO-251) package.

  • Maximum Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 5A
  • Maximum On-State Resistance: 600mOhm @ 2.9A and 10V gate-source voltage
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Gate Charge: 23nC @ 10V
  • Input Capacitance: 300pF @ 25V
  • Power Dissipation: 43W

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4366 $50.2090
280+ $0.3583 $100.3240
435+ $0.3471 $150.9885
600+ $0.3359 $201.5400
770+ $0.3247 $250.0190
1,035+ $0.2911 $301.2885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,490 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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