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IRFSL23N15D

Part No IRFSL23N15D
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A) | MOSFET N-CH 150V 23A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 150V
Id - Continuous Drain Current 23A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 90mOhm at 14A, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 56nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1200pF at 25V
Power Dissipation (Maximum) 3.8W, 136W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188043-IRFSL23N15D
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFSL23N15D CAD Model

Description

The Infineon Technologies MOSFET is a high-quality electronic component designed for use in discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • Transistor Polarity: N-Channel
  • Supplier Device Package: TO-262
  • Vds - Drain-Source Breakdown Voltage (Max): 150V
  • Continuous Drain Current: 23A
  • Rds On (Maximum) @ Id, Vgs: 90mOhm @ 14A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 5.5V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1200pF @ 25V
  • Status: Obsolete
  • Power Dissipation (maximum): 3.8W, 136W
  • Supply and Demand: Balanced
  • Manufacturer Pack Quantity: 50
  • MSL Level: 1 (Unlimited)
  • Operating Temperature Range: -55°C ~ 175°C

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