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IRFR5505

Part No IRFR5505
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A) | MOSFET P-CH 55V 18A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 18A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 110mOhm at 9.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 32nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 650pF at 25V
Power Dissipation (Maximum) 57W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1187945-IRFR5505
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Automotive, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFR5505 CAD Model

Description

Infineon Technologies IRFR5505 is a P-channel MOSFET transistor with a drain-source breakdown voltage of 55V.

  • Mounting Style: SMD
  • Maximum Power Dissipation: 57W
  • Maximum Continuous Drain Current: 18A
  • Maximum On-Resistance: 110mOhm @ 9.6A and 10V
  • Gate Charge: 32nC @ 10V
  • Gate-Source Voltage: ±20V
  • Applications: commonly used in automotive and power management applications.
  • Temperature Range: -55°C to 150°C
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.2595 $50.6025
415+ $0.2430 $100.8450
640+ $0.2348 $150.2720
920+ $0.2184 $200.9280
1,190+ $0.2102 $250.1380
1,490+ $0.2020 $300.9800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,000 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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