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IRFL4105

Name: IRFL4105
Brand: Infineon Technologies
SKU: 605039
Availability: InStock
Rating: 4.84 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IRFL4105
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A) \| MOSFET N-CH 55V 3.7A SOT223
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	55V
Id - Continuous Drain Current	3.7A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	45mOhm at 3.7A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	35nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	660pF at 25V
Power Dissipation (Maximum)	1W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	SOT-223
Manufacturer Package	TO-261-4, TO-261AA
Manufacturer Pack Quantity	80
MSL Level	1 (Unlimited)
Win Source Part Number	1187727-IRFL4105
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRFL4105 CAD Model

Description

The Infineon Technologies IRFL4105 is an N-Channel MOSFET designed for various applications. With a drain-source breakdown voltage of 55V and continuous drain current of 3.7A, this MOSFET is ideal for applications that require high power density. The IRFL4105 is from Infineon Technologies.

Drain-Source Breakdown Voltage: 55V
Continuous Drain Current: 3.7A
Package: SOT-223
Maximum Power Dissipation: 1W
Gate-Source Voltage: ±20V
Gate Charge: 35nC @ 10V
Operating Temperature Range: -55°C to 150°C
On-Resistance: 45mOhm @ 3.7A and 10V

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