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Same model may have multiple batches, images only for reference.
IRFI7440GPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFI7440GPBF

Part No IRFI7440GPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET® Power MOSFET | MOSFET N-CH 40V 95A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 95A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.5mOhm at 57A, 10V
Gate Source Voltage(th) (Maximum) at Id 3.9V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 132nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4549pF at 25V
Power Dissipation (Maximum) 42W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB Full-Pak
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187665-IRFI7440GPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFI7440GPBF CAD Model

Description

The Infineon Technologies IRFI7440GPBF is a N-channel MOSFET transistor in TO-220AB Full-Pak package. The transistor has a Vds - Drain-Source Breakdown Voltage of 40V and a continuous drain current of 95A.

  • Manufacturer: Infineon Technologies
  • Type: N-channel MOSFET
  • Package: TO-220AB Full-Pak
  • Vds - Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 95A
  • Rds On (Maximum) @ Id, Vgs: 2.5mOhm @ 57A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 3.9V @ 100μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 132nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 4549pF @ 25V
  • Application: Discrete Semiconductor Products

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