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Same model may have multiple batches, images only for reference.
IRF9Z24NLPBF Real Image
Same model may have multiple batches, images only for reference.

IRF9Z24NLPBF

Part No IRF9Z24NLPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET P-CH 55V 12A TO-262
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 12A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 175mOhm at 7.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 19nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 350pF at 25V
Power Dissipation (Maximum) 3.8W, 45W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187474-IRF9Z24NLPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9Z24NLPBF CAD Model

Description

The IRF9Z24NLPBF is an electronic component manufactured by Infineon Technologies.

  • Supply and Demand Status: balanced
  • Usage: widely used in the electronic industry
  • Win Source Part Number: 1187474-IRF9Z24NLPBF
  • Manufacturer Homepage: www.irf.com
  • Vds - Drain-Source Breakdown Voltage: 55V
  • Id - Continuous Drain Current: 12A

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