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Same model may have multiple batches, images only for reference.
IRF9328PBF Real Image
Same model may have multiple batches, images only for reference.

IRF9328PBF

Part No IRF9328PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET P-CH 30V 12A 8-SO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 12A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 11.9mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.4V at 25μA
Gate Charge (Qg) (Maximum) at Vgs 52nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1680pF at 25V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Win Source Part Number 1187427-IRF9328PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF9328PBF CAD Model

Description

The Infineon Technologies IRF9328PBF is a P-Channel MOSFET with a drain-source breakdown voltage of 30V and continuous drain current of 12A.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 12A
  • Package: 8-SOIC
  • Maximum Power Dissipation: 2.5W
  • Input Capacitance: 1680pF @ 25V
  • Gate Charge: 52nC @ 10V

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170+ $0.5971 $101.5070
260+ $0.5784 $150.3840
360+ $0.5598 $201.5280
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620+ $0.4851 $300.7620
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MOQ: 70 pcs
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