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IRF6629TR1PBF

Part No IRF6629TR1PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 25V 29A DIRECTFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Packaging Reel
Part Status Obsolete (End Of Life)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) at 25°C 29A , 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 2.1mOhm at 29A, 10V
Vgs(th) (Maximum) at Id 2.35V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 51nC at 4.5V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4260pF at 13V
Power Dissipation (Maximum) 2.8W , 100W (Tc)
Temperature Range - Operating -40°C ~ 150°C
Mounting Style SMD
Supplier Device Package DIRECTFET MX
Manufacturer Package DirectFET Isometric MX
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813486-IRF6629TR1PBF
Ultra Librarian 3D Model Ultra Librarian IRF6629TR1PBF CAD Model

Description

The IRF6629TR1PBF is an obsolete MOSFET from Infineon Technologies.

  • FET Type: N-channel
  • Supplier Device Package: directFET MX
  • Maximum Power Dissipation: 2.8W
  • Current-Continuous Drain: 29A

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3776 $61.9920
105+ $1.1304 $118.6920
160+ $1.0951 $175.2160
220+ $1.0598 $233.1560
285+ $1.0244 $291.9540
380+ $0.9185 $349.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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