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IRF520NS

Name: IRF520NS
Brand: Infineon Technologies
SKU: 604341
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRF520NS
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) \| MOSFET N-CH 100V 9.7A D2PAK
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	100V
Id - Continuous Drain Current	9.7A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	200mOhm at 5.7A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	25nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	330pF at 25V
Power Dissipation (Maximum)	3.8W, 48W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	SMD
Supplier Device Package	D2PAK
Manufacturer Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1187029-IRF520NS
Manufacturer Homepage	www.irf.com
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Limited
Family Name	IRF520NS
Introduction Date	May 13, 1998
ECCN	EAR99
Estimated EOL Date	Obsolete
Ultra Librarian 3D Model	Ultra Librarian IRF520NS CAD Model

Description

The Infineon Technologies IRF520NS is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 9.7A.

Drain-Source Breakdown Voltage: 100V
Continuous Drain Current: 9.7A
Maximum On-Resistance: 200mOhm @ 5.7A and 10V gate-source voltage
Gate-Source Voltage Threshold: 4V @ 250μA
Maximum Gate-Source Voltage: ±20V
Input Capacitance: 330pF @ 25V
Supplier Device Package: D2PAK
Power Dissipation: 3.8W
Maximum Power: 48W
Status: Obsolete
Manufacturer Pack Quantity: 50
ECCN: EAR99

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