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Same model may have multiple batches, images only for reference.
IRF4104S Real Image
Same model may have multiple batches, images only for reference.

IRF4104S

Part No IRF4104S
Manufacturer Infineon Technologies
Catalog FETs - Single
Description AUTOMOTIVE MOSFET | MOSFET N-CH 40V 75A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 75A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 5.5mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 100nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3000pF at 25V
Power Dissipation (Maximum) 140W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187011-IRF4104S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF4104S CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel transistor with a Vds - Drain-Source Breakdown Voltage of 40V and Id - Continuous Drain Current of 75A.

  • Product: MOSFET
  • Manufacturer:Infineon Technologies
  • Vds - Drain-Source Breakdown Voltage: 40V
  • Id - Continuous Drain Current: 75A
  • Rds On (Maximum) @ Id, Vgs: 5.5mOhm @ 75A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 100nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 3000pF @ 25V
  • Package: D2PAK
  • Power Dissipation (Maximum): 140W
  • Application: Discrete Semiconductor Products applications

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