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Same model may have multiple batches, images only for reference.
IRF4104L Real Image
Same model may have multiple batches, images only for reference.

IRF4104L

Part No IRF4104L
Manufacturer Infineon Technologies
Catalog FETs - Single
Description AUTOMOTIVE MOSFET | MOSFET N-CH 40V 75A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 75A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 5.5mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 100nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3000pF at 25V
Power Dissipation (Maximum) 140W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187010-IRF4104L
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF4104L CAD Model

Description

The IRF4104L is a MOSFET technology device with an N-channel transistor polarity manufactured by Infineon Technologies.

  • Transistor Polarity: N-Channel
  • Package: TO-262
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 75A
  • Maximum Rds On: 5.5mOhm @ 75A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Voltage(th) @ Maximum Id: 4V @ 250μA
  • Gate Charge (Qg) @ Maximum Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) @ Maximum Vds: 3000pF @ 25V
  • Status: Obsolete
  • Supply and Demand: Balance

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