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Same model may have multiple batches, images only for reference.
IRF3706LPBF Real Image
Same model may have multiple batches, images only for reference.

IRF3706LPBF

Part No IRF3706LPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use | MOSFET N-CH 20V 77A TO-262
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 77A
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Rds On (Maximum) at Id, Vgs 8.5mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 35nC at 4.5V
Gate Source Voltage (Maximum) ±12V
Input Capacitance (Ciss) (Maximum) at Vds 2410pF at 10V
Power Dissipation (Maximum) 88W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186979-IRF3706LPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3706LPBF CAD Model

Description

The Infineon Technologies IRF3706LPBF is an N-Channel MOSFET transistor with a Vds - Drain-Source Breakdown Voltage of 20V and a continuous drain current of 77A.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 77A
  • Rds On (Maximum) @ Id, Vgs: 8.5mOhm @ 15A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 35nC @ 4.5V
  • Mounting Type: Through Hole
  • Power Dissipation (Maximum): 88W
  • Operating Temperature Range: -55°C ~ 175°C
  • Package: Tube

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