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Same model may have multiple batches, images only for reference.
IRF3415SPBF Real Image
Same model may have multiple batches, images only for reference.

IRF3415SPBF

Part No IRF3415SPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 150V 43A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 150V
Id - Continuous Drain Current 43A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 42mOhm at 22A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 200nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2400pF at 25V
Power Dissipation (Maximum) 3.8W, 200W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 714543-IRF3415SPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3415SPBF CAD Model

Description

The Infineon Technologies 714543-IRF3415SPBF is a discrete semiconductor product.

  • Supplier Device Package: D2PAK
  • Component Type: N-channel MOSFET
  • Maximum Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 43A
  • Gate Source Voltage(th) (maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 2400pF @ 25V

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