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IRF2807Z

Part No IRF2807Z
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Advanced Process Technology | MOSFET N-CH 75V 75A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 75V
Id - Continuous Drain Current 75A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 9.4mOhm at 53A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 110nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3270pF at 25V
Power Dissipation (Maximum) 170W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186941-IRF2807Z
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF2807Z CAD Model

Description

The Infineon Technologies IRF2807Z is a high-performance power MOSFET that is designed for use in a wide range of applications.

  • Drain-Source Breakdown Voltage: 75V
  • On-Resistance: 9.4mOhm
  • Package: TO-220
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8492 $64.7220
80+ $1.5177 $121.4160
120+ $1.4703 $176.4360
165+ $1.4230 $234.7950
210+ $1.3756 $288.8760
285+ $1.2335 $351.5475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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