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Same model may have multiple batches, images only for reference.
IRF2804LPBF Real Image
Same model may have multiple batches, images only for reference.

IRF2804LPBF

Part No IRF2804LPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description AUTOMOTIVE MOSFET | MOSFET N-CH 40V 75A TO-220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 75A
Rds On (Maximum) at Id, Vgs 2.3mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 240nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 6450pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1186932-IRF2804LPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF2804LPBF CAD Model

Description

The Infineon Technologies MOSFET, IRF2804LPBF, is a N-Channel transistor with a drain-source voltage rating of 40V and a maximum continuous drain current of 75A.

  • Maximum Power Dissipation: 300W
  • Operating Temperature Range: -55°C to 175°C
  • Package: TO-262
  • Mounting Type: Through-Hole
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 6450pF @ 25V

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