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Same model may have multiple batches, images only for reference.
IRF1010EZL Real Image
Same model may have multiple batches, images only for reference.

IRF1010EZL

Part No IRF1010EZL
Manufacturer Infineon Technologies
Catalog FETs - Single
Description AUTOMOTIVE MOSFET | MOSFET N-CH 60V 75A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 75A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 8.5mOhm at 51A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 86nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2810pF at 25V
Power Dissipation (Maximum) 140W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186867-IRF1010EZL
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF1010EZL CAD Model

Description

The Infineon Technologies MOSFET is a high-performance electronic component that is designed to offer reliable and efficient operation from Infineon Technologies.

  • Vds - Drain-Source Breakdown Voltage: 60V
  • Id - Continuous Drain Current: 75A
  • Rds On (Maximum) @ Id, Vgs: 8.5mOhm @ 51A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 86nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2810pF @ 25V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Operating Temperature Range: -55°C ~ 175°C
  • Product Status: Obsolete with limited supply and demand status

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