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IPZ60R070P6FKSA1

Part No IPZ60R070P6FKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 53.5A TO247-4 / N-Channel 600 V 53.5A (Tc) 391W (Tc) Through Hole PG-TO247-4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P6
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 53.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 20.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.72mA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4750 pF @ 100 V
Power Dissipation (Max) 391W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-4
Package / Case TO-247-4
Base Product Number IPZ60R070
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names ROCINFIPZ60R070P6FKSA1,SP001313880,2156-IPZ60R070P6FKSA1
Standard Package 240
Win Source Part Number 1065395-IPZ60R070P6FKSA1
Ultra Librarian 3D Model Ultra Librarian IPZ60R070P6FKSA1 CAD Model

Description

The Infineon Technologies CoolMOS P6 series is a set of N-Channel MOSFETs designed for use in various electronic devices.

  • Drain to Source Voltage (Vdss): 600 V
  • Continuous Drain Current (Id): 53.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Packaging: Through-hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.9454 $53.5086
21+ $4.8783 $102.4443
32+ $4.7259 $151.2288
44+ $4.5734 $201.2296
57+ $4.4210 $251.9970
76+ $3.9636 $301.2336
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Availability: 400 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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