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IPW65R110CFDAFKSA1

Part No IPW65R110CFDAFKSA1
Manufacturer Infineon Technologies
Catalog OEM Souring
Description MOSFETs
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category OEM Souring
Win Source Part Number 1465654-IPW65R110CFDAFKSA1
Manufacturer Infineon Technologies
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110 mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 100 V
Power Dissipation (Max) 277.8W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Ultra Librarian 3D Model Ultra Librarian IPW65R110CFDAFKSA1 CAD Model

Description

The IPW65R110CFDAFKSA1 is a cutting-edge MOSFET introduced by Infineon Technologies, designed to cater to a broad spectrum of high-power and high-efficiency applications. This device is tailored for applications requiring fast switching, low on-resistance, and high reliability such as switching power supplies, motor controllers, and power converters. Infineon’s advanced CoolMOS™ technology is employed in this MOSFET, providing it with an excellent thermal performance and efficiency, a critical advantage in reducing power loss and improving the overall system durability and performance. Its robust design ensures that it can handle high surge currents without degrading, making it a reliable choice for critical applications. With these features, the IPW65R110CFDAFKSA1 stands out for its ability to enhance power density and efficiency, making it a preferable option for designers looking to meet stringent energy-saving standards.

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Shipping Information

Shipped from HK warehouse
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