The IPS65R600E6AKMA1 is a N-Channel MOSFET transistor from Infineon Technologies.

• Series: CoolMOS™ E6
• Type: Discrete semiconductor products
• Package: Through-hole package with stub leads
• Drain to Source Voltage (Vdss): 650 V
• Continuous Drain Current (Id) @ 25°C: 7.3A (Tc)
• Maximum On-Resistance (Rds On) @ Id, Vgs: 600mOhm @ 2.1A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
• Power Dissipation (Max): 63W (Tc)
• Operating Temperature Range: -55°C to 150°C (TJ)
• Ideal for: Use in transistors, FETs, MOSFETs, and other electronic components