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IPP90R500C3

Part No IPP90R500C3
Manufacturer Infineon Technologies
Catalog FETs - Single
Description CoolMOS™ Power Transistor | MOSFET N-CH 900V 11A TO220-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 900V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 500mOhm at 6.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 3.5V at 740μA
Gate Charge (Qg) (Maximum) at Vgs 68nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1700pF at 100V
Power Dissipation (Maximum) 156W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PG-TO220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1186392-IPP90R500C3
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP90R500C3 CAD Model

Description

The IPP90R500C3 is a MOSFET technology electronic component manufactured by Infineon Technologies. This component is designed to provide high power and is widely used in various electronic applications.

  • Vds - Drain-Source Breakdown Voltage: 900V
  • Id - Continuous Drain Current: 11A
  • Gate Source Voltage(th) (Maximum) @ Id: 3.5V @ 740μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 68nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1700pF @ 100V
  • Package: TO-220-3
  • Power Dissipation (Maximum): 156W
  • Supply: Tube
  • Manufacturer Pack Quantity: 1
  • MSL Level: 1 (Unlimited)
  • Temperature Range: -55°C to 150°C
  • Product Status: Obsolete

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