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Same model may have multiple batches, images only for reference.
IPP083N10N5AKSA1
Same model may have multiple batches, images only for reference.

IPP083N10N5AKSA1

Part No IPP083N10N5AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 73A TO220-3 / N-Channel 100 V 73A (Tc) 100W (Tc) Through Hole PG-TO220-3
Datasheet
IPP083N10N5AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 8.3mOhm @ 73A, 10V
Vgs(th) (Max) @ Id 3.8V @ 49µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2730 pF @ 50 V
Power Dissipation (Max) 100W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP083
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-IPP083N10N5AKSA1,SP001226036,IFEINFIPP083N10N5AKSA1
Standard Package 50
Win Source Part Number 967759-IPP083N10N5AKSA1
Ultra Librarian 3D Model Ultra Librarian IPP083N10N5AKSA1 CAD Model

Description

The IPP083N10N5AKSA1 is an N-channel MOSFET transistor manufactured by Infineon Technologies.

  • Channel Type: N-Channel
  • Drain-Source Voltage: 100V
  • Continuous Drain Current: 73A
  • Mounting Type: Through-Hole
  • Package: TO-220-3
  • Power Dissipation: 100W
  • MSL Level: Unlimited
  • REACH: Unaffected

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330+ $0.9180 $302.9400
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