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IPI90R500C3XKSA2

Part No IPI90R500C3XKSA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 11A TO262-3 / N-Channel 900 V 11A (Tc) 156W (Tc) Through Hole PG-TO262-3-1
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 740µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 100 V
Power Dissipation (Max) 156W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number IPI90R500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP002548886
Standard Package 500
Win Source Part Number 994454-IPI90R500C3XKSA2
Ultra Librarian 3D Model Ultra Librarian IPI90R500C3XKSA2 CAD Model

Description

The Infineon Technologies IPI90R500C3XKSA2 is a CoolMOS N-channel MOSFET that has a drain to source voltage of 900V and a continuous drain current of 11A @ 25°C.

  • Manufacturer: Infineon Technologies
  • Type: CoolMOS N-channel MOSFET
  • Drain to Source Voltage: 900V
  • Continuous Drain Current: 11A @ 25°C
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 740μA
  • Power Dissipation: 156W @ Tc
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
  • Vgs (Max): ±20V
  • Operating Temperature Range: -55°C to 150°C
  • ECCN: EAR99
  • Package/Case: TO-262-3 Long Leads, I²Pak, TO-262AA

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