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IPD50N04S4-10

Part No IPD50N04S4-10
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 40V 50A TO252-3-313
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Reel(TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Rds On (Max) @ Id, Vgs 9.3 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 15μA
Gate Charge (Qg) @ Vgs 18.2nC @ 10V
Input Capacitance (Ciss) @ Vds 1430pF @ 25V
Power - Max 41W
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style SMD/SMT
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Device Package PG-TO252-3-313
Win Source Part Number 205226-IPD50N04S4-10
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD50N04S4-10 CAD Model

Description

The Infineon Technologies 205226-IPD50N04S4-10 is a N-Channel MOSFET transistor from the OptiMOS series.

  • Drain-Source Voltage: 40V
  • Continuous Drain Current: 50A @ 25°C
  • Maximum Rds On: 9.3 mOhm @ 50A and 10V
  • Gate-Source Threshold Voltage: 4V @ 15μA
  • Gate Charge: 18.2nC @ 10V
  • Input Capacitance: 1430pF @ 25V
  • Maximum Power: 41W
  • Package: TO-252-3
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6602 $59.4180
215+ $0.5418 $116.4870
335+ $0.5248 $175.8080
455+ $0.5079 $231.0945
590+ $0.4910 $289.6900
790+ $0.4402 $347.7580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 76,400 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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