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Same model may have multiple batches, images only for reference.
IPD06P004NATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD06P004NATMA1

Part No IPD06P004NATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 16.4A TO252-3 / P-Channel 60 V 16.4A (Tc) 63W (Tc) Surface Mount PG-TO252-3
Datasheet
IPD06P004NATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 16.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id 4V @ 710µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 30 V
Power Dissipation (Max) 63W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD06P
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001727898
Standard Package 2,500
Win Source Part Number 959871-IPD06P004NATMA1
Ultra Librarian 3D Model Ultra Librarian IPD06P004NATMA1 CAD Model

Description

The Infineon Technologies IPD06P004NATMA1 is a P-channel MOSFET transistor that belongs to the OptiMOS™ series.

  • Series: OptiMOS™
  • Channel Type: P-channel
  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 16.4A
  • On-Resistance: 90mOhm @ 16.4A @ 10V
  • Power Dissipation: 63W
  • Gate Charge: 27nC @ 10V
  • Win Source Part Number: 959871-IPD06P004NATMA1

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