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Same model may have multiple batches, images only for reference.
IPB65R310CFDAATMA1
Same model may have multiple batches, images only for reference.

IPB65R310CFDAATMA1

Part No IPB65R310CFDAATMA1
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 650V 11.4A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 310mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 100 V
Power Dissipation (Max) 104.2W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Case / Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel
Supply and Demand Status Shortage
Win Source Part Number 1495218-IPB65R310CFDAATMA1
Ultra Librarian 3D Model Ultra Librarian IPB65R310CFDAATMA1 CAD Model

Description

N

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