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Same model may have multiple batches, images only for reference.
IMZA65R072M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMZA65R072M1HXKSA1

Part No IMZA65R072M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET 650V NCH SIC TRENCH
Datasheet
IMZA65R072M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202968-IMZA65R072M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-4-3
Ultra Librarian 3D Model Ultra Librarian IMZA65R072M1HXKSA1 CAD Model

Description

The Infineon Technologies CoolSiC™ is a high-performance N-Channel SiCFET (Silicon Carbide Field-Effect Transistor) designed for various applications.

  • Operating Temperature Range: -55°C to 150°C
  • Mounting Type: Through Hole
  • Package: Tube
  • Series: CoolSiC™
  • Manufacturer: Infineon Technologies

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Quantity Unit Price Ext. Price
8+ $6.9208 $55.3664
16+ $6.4828 $103.7248
24+ $6.2637 $150.3288
35+ $5.8257 $203.8995
45+ $5.6067 $252.3015
56+ $5.3877 $301.7112
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Availability: 10,000 pieces
MOQ: 8 pcs
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